Publication date: 15th May 2026
Defects and grain boundaries remain critical bottlenecks in unlocking the full potential of perovskite semiconductors in applications. In this talk, I will present a scalable strategy to precisely control crystal nucleation and growth, enabling the fabrication of millimeter-scale perovskite crystals with markedly reduced defect densities and enhanced charge transport properties.[1,2]
By employing methylamine-induced dissolution and recrystallization in combination with pre-patterned nucleation seeds, we demonstrate the formation of continuous perovskite films composed of large, well-defined crystals.[3] This approach uniquely allows the creation of stoichiometrically identical samples with systematically varied crystal size.
Leveraging this level of control, I will introduce a method to deterministically tune the number of grain boundaries within a film. This platform enables direct, quantitative investigation of grain boundary effects, including their role in processes such as ion migration.
These results establish a new experimental framework for directly disentangling structure-property relationships in perovskite materials and provide exciting insights for the design of next-generation high-performance optoelectronic devices.
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