Top-Down Patterning of Metal Halide Perovskites for On-Chip Device Integration
Maryam Mohammadi a, Saeed Goudarzi b, Federico Fabrizi a b, Sana Khan a b, Liudmila Starodubtceva b, Surendra B. Anantharaman a c, Max C. Lemme a b
a AMO GmbH, Otto-Blumenthal-Straße 25, Aachen, 52074, Germany
b Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Straße 25, Aachen, 52074, Germany
c Low-dimensional Semiconductors Lab, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai 600036, India.
Proceedings of Hybrid and Perovskite materials for energy, lighting, sensing and computing (HYPE26)
Athens, Greece, 2026 June 22nd - 24th
Organizers: Maria Vasilopoulou and Thomas Stergiopoulos
Invited Speaker, Maryam Mohammadi, presentation 017
Publication date: 15th May 2026

Metal halide perovskites (MHPs) are mixed ionic-electronic semiconductors with outstanding optoelectronic properties.1 Their low-temperature solution processability, high radiative efficiency, tunable bandgaps, and defect tolerance make them attractive for applications ranging from light emission and lasing to sensing and memory devices2. However, their integration into practical device platforms requires robust strategies for controlled patterning and integration with functional contacts and device architectures.3 The development of patterning methods for MHPs remains challenging due to their intrinsic ionic nature and their sensitivity to the solvents used in standard lithography processes.

I will present our recent progress in developing a versatile top-down patterning method based on photolithography and reactive ion etching (RIE), which can be tuned to accommodate different perovskite compositions and morphologies.4 This process preserves the functional properties of the perovskite while enabling device-level integration and reproducible fabrication of micron-sized features down to 1 μm across different chips. I will discuss the implementation of these patterned MHPs in photonic devices, including lasing, as well as in perovskite-based memory devices with potential for neuromorphic computing.

For laser devices, a cesium lead bromide (CsPbBr3) perovskite laser was monolithically integrated on a silicon nitride waveguide platform with a first-order grating distributed-feedback (DFB) cavity. The device operated at 540 nm in the green spectral region, where III-V lasers have limitations, and exhibited a threshold of 0.755 mJ cm⁻2. For memory devices, patterned CsPbBr3 layers were integrated into vertical nickel (Ni)/CsPbBr3/aluminum (Al) memristors with a 50 μm × 50 μm active area, showing forming-free bipolar resistive switching, high ON/OFF ratios of approximately ~106–107, state retention of > 2×10⁵ s, and stable operation over extended ambient storage.

Overall, this talk will highlight how perovskite structuring can serve as an enabling strategy for different classes of devices at the interface of lighting and computing.

This project was funded by the Deutsche Forschungsgemeinschaft (DFG) within TRR 404 Active-3D (project number: 528378584) and the German Ministry of Education and Research (BMBF) through the project NEPOMUQ (13N17112). S.B.A. acknowledges the funding received from the Anusandhan National Research Foundation under the Prime Minister Early Career Grant (ANRF/ECRG/2024/002241/ENS).

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