Quantification of Competing Recombination Pathways in Halide Perovskite Multilayers Using Photophysics-Informed Probabilistic Modelling
Konstantina Armadorou a, Barnaby Lewis a, Weidong Xu a, Zimu Wei a, Samuel Stranks a b
a Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge, UK
b Cavendish Laboratory, University of Cambridge, Cambridge, UK
Proceedings of Hybrid and Perovskite materials for energy, lighting, sensing and computing (HYPE26)
Athens, Greece, 2026 June 22nd - 24th
Organizers: Maria Vasilopoulou and Thomas Stergiopoulos
Poster, Konstantina Armadorou, 027
Publication date: 15th May 2026

Hybrid organic-inorganic lead halide perovskites have emerged as promising materials for solar cells, garnering significant research interest over the past decade. An important factor for fabricating efficient and stable perovskite solar cells (PSCs) is the suitability of passivating interlayers and charge extraction layers. However, their introduction to either of the perovskite interfaces can lead to unwanted recombination pathways or more complicated recombination dynamics. For example, the deposition of C60, commonly employed as an electron transport layer for p-i-n PSCs, introduces deep trap states and additional recombination-induced loss pathways [1]. As such, it is crucial to identify the effect of each layer of a complete PSC (charge transport layer, interlayer, absorber) in terms of loss contribution, and to build a robust methodology for correlating results across different characterisation techniques.

Herein, we present a joint analysis framework that simultaneously correlates transient photoluminescence (TRPL) and nanosecond transient absorption spectroscopy (nsTAS) in perovskite thin films and half-stacks with solar cell-relevant architecture. We identify among competing recombination pathways following photoexcitation, with the development of appropriate physical models [2,3]. We then employ a Markov-Chain Monte-Carlo (MCMC) model to jointly explore the full TRPL and nsTAS parameter space, quantifying each recombination process described within the model. We apply this methodology to elucidate the effect of various interlayers on recombination dynamics, differentiating between chemical and field-effect passivation mechanisms, thus identifying the limitations of materials commonly employed in device design. This constitutes a robust protocol for systematically guiding future material and device development [4].

We thank Robin Heumann and Prof. Thomas Kirchartz (Forschungszentrum Jülich, Germany) for helpful discussions.

K. K. A. acknowledges a George and Lilian Schiff Studentship and a Cambridge Trust Scholarship.

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