CHARGE TRANSPORT PHYSICS OF HYBRID PEROVSKITE FIELD EFFECT TRANSISTORS
Henning Sirringhaus a
a Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge, United Kingdom
Proceedings of International Conference on Perovskite Memristors and Electronics 2021 (ICPME2021)
Online, Spain, 2021 December 13th - 14th
Organizers: Ho Won Jang and Ankur Solanki
Invited Speaker, Henning Sirringhaus, presentation 003
DOI: https://doi.org/10.29363/nanoge.icpme.2021.003
Publication date: 1st December 2021

Field-effect transistors based on hybrid metal halide perovskite semiconductors provide a controlled means of studying the charge transport physics of these materials and are also of interest for a broad range of applications in electronics, optoelectronics or bioelectronics. In this talk we will provide a general overview of the current understanding of the main factors that govern and limit the charge transport properties of these materials and provide specific examples of recent approaches that aim to enhance FET performance and stability. We will discuss in particular approaches to understand the effects of ion migration on the transport of electronic charges and approaches to minimze effects of ion migration.  

 

 

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