Impedance spectroscopy characterization of memristors and neurons in relation to spiking and hysteresis effects
Juan Bisquert a
a Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain
Proceedings of International Conference on Perovskite Memristors and Electronics 2021 (ICPME2021)
Online, Spain, 2021 December 13th - 14th
Organizers: Ho Won Jang and Ankur Solanki
Oral, Juan Bisquert, presentation 004
DOI: https://doi.org/10.29363/nanoge.icpme.2021.004
Publication date: 1st December 2021

A memristor is a device that has different metastable states at a voltage V. It has a resistance that depends on the history of the system, and the states can be switched by applied voltage. A memristor is a device with very large hysteresis. Neurons have the same ingredients as memristors plus at least one negative resistance. The neuron can undergo a Hopf bifurcation that passes the dynamics from rest to a spiking state. We provide impedance spectroscopy criteria to identify these features. First, we show the impedance model of a halide perovskite memristor, that exhibits inductive behaviour due to inverted hysteresis. We introduce the concept of a chemical inductor and explain the general kinetic model that generates such behaviour in a variety of systems. Next, we show the full dynamical regimes of a FitzHugh-Nagumo model, that is a representative minimal model of a spinning neuron

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