DOI: https://doi.org/10.29363/nanoge.icpme.2021.006
Publication date: 1st December 2021
Understanding the capacitive response in hybrid perovskite devices has been the focus of much research in recent years as it is connected with hysteresis and degradation of solar cells. Negative capacitance and loops have been observed during the analysis of Impedance Spectroscopy results. 1,2-4 The origin of these features seems to be related to the dynamic interaction of migrating ions with external interfaces and play a role in memristor switching between high and low resistance states. Here we present the dynamic state transition in a 2D Ruddlesden-Popper perovskite-based memristor device, measured via impedance spectroscopy. The spectral evolution of the transition exhibits a significant transformation of the low frequency arc to a negative capacitance arc. The capacitance-frequency evolution of the device indicates that the appearance of the negative capacitance is intimately related to a slow kinetic phenomenon due to ionic migration and further interaction with the external contacts. We discuss the internal mechanism on the basis of the device configuration and the electrical response. The switching mechanisms of devices containing a perovskite/metal contact are due to the interface chemical transformation and devices containing an organic buffer layer follow a filamentary formation.
We thank the financial support by Generalitat Valenciana for a Prometeo (PROMETEU/2020/028), Grisolia Grant (GRISOLIAP/2019/048) and Ministerio de Ciencia y Innovación (PID2019-107348GB-100).
nanoGe is a prestigious brand of successful science conferences that are developed along the year in different areas of the world since 2009. Our worldwide conferences cover cutting-edge materials topics like perovskite solar cells, photovoltaics, optoelectronics, solar fuel conversion, surface science, catalysis and two-dimensional materials, among many others.
Previously nanoGe Spring Meeting (NSM) and nanoGe Fall Meeting (NFM), MATSUS is a multiple symposia conference focused on a broad set of topics of advanced materials preparation, their fundamental properties, and their applications, in fields such as renewable energy, photovoltaics, lighting, semiconductor quantum dots, 2-D materials synthesis, charge carriers dynamics, microscopy and spectroscopy semiconductors fundamentals, etc.
International Conference on Hybrid and Organic Photovoltaics
International Conference on Hybrid and Organic Photovoltaics (HOPV) is celebrated yearly in May. The main topics are the development, function and modeling of materials and devices for hybrid and organic solar cells. The field is now dominated by perovskite solar cells but also other hybrid technologies, as organic solar cells, quantum dot solar cells, and dye-sensitized solar cells and their integration into devices for photoelectrochemical solar fuel production.
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
The main topics of the Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP) are discussed every year in Asia-Pacific for gathering the recent advances in the fields of material preparation, modeling and fabrication of perovskite and hybrid and organic materials. Photovoltaic devices are analyzed from fundamental physics and materials properties to a broad set of applications. The conference also covers the developments of perovskite optoelectronics, including light-emitting diodes, lasers, optical devices, nanophotonics, nonlinear optical properties, colloidal nanostructures, photophysics and light-matter coupling.
The International Conference on Perovskite Thin Film Photovoltaics Perovskite Photonics and Optoelectronics (NIPHO) is the best place to hear the latest developments in perovskite solar cells as well as on recent advances in the fields of perovskite light-emitting diodes, lasers, optical devices, nanophotonics, nonlinear optical properties, colloidal nanostructures, photophysics and light-matter coupling.