Understanding low frequency capacitive effects in perovskite memristor dynamics
Antonio Guerrero a
a Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain
Proceedings of International Conference on Perovskite Memristors and Electronics 2021 (ICPME2021)
Online, Spain, 2021 December 13th - 14th
Organizers: Ho Won Jang and Ankur Solanki
Oral, Antonio Guerrero, presentation 006
DOI: https://doi.org/10.29363/nanoge.icpme.2021.006
Publication date: 1st December 2021

Understanding the capacitive response in hybrid perovskite devices has been the focus of much research in recent years as it is connected with hysteresis and degradation of solar cells. Negative capacitance and loops have been observed during the analysis of Impedance Spectroscopy results. 1,2-4 The origin of these features seems to be related to the dynamic interaction of migrating ions with external interfaces and play a role in memristor switching between high and low resistance states. Here we present the dynamic state transition in a 2D Ruddlesden-Popper perovskite-based memristor device, measured via impedance spectroscopy. The spectral evolution of the transition exhibits a significant transformation of the low frequency arc to a negative capacitance arc. The capacitance-frequency evolution of the device indicates that the appearance of the negative capacitance is intimately related to a slow kinetic phenomenon due to ionic migration and further interaction with the external contacts. We discuss the internal mechanism on the basis of the device configuration and the electrical response. The switching mechanisms of devices containing a perovskite/metal contact are due to the interface chemical transformation and devices containing an organic buffer layer follow a filamentary formation.

We thank the financial support by Generalitat Valenciana for a Prometeo (PROMETEU/2020/028), Grisolia Grant (GRISOLIAP/2019/048) and Ministerio de Ciencia y Innovación (PID2019-107348GB-100).

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