DOI: https://doi.org/10.29363/nanoge.icpme.2021.007
Publication date: 1st December 2021
Emerging nonvolatile memory technologies such as phase change memory, spin-transfer torque-magnetic memory, and resistive switching memory (ReRAM) have been investigated as next-generation technology to replace conventional flash memory. Among them, ReRAM has been extensively studied for nonvolatile memory applications owing to its excellent retention, endurance, and high on/off ratio. Furthermore, ReRAM has a simple two-terminal structure, fast switching speed, and low power consumption with excellent scalability. ReRAM cells can be integrated into a cross-point array to obtain an area-efficient structure. In addition to planar cross-point arrays, 3D stackable cross-point arrays have been recently considered to maximize the ReRAM density. Among various materials for use in ReRAM inorganic metal oxides have been investigated widely. Recently, active research has been done on the fabrication and characterization of ReRAM devices utilizing emerging materials. Especially, hybrid organic-inorganic perovskite materials have been used as the resistive switching layer in ReRAM devices. In this presentation, a strategy toward design of high-density memory devices utilizing metal-halide perovskite materials will be discussed in detail with an emphasis on practical applicability, scalability, and reliability.
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