Measurement Process - Dependent Performance and Conduction Mechanism of Hybrid Perovskite Memristors
Himangshu Jyoti Gogoi a, Arun Tej Mallajosyula a
a Indian Institute of Technology Guwahati
Proceedings of International Conference on Perovskite Memristors and Electronics 2021 (ICPME2021)
Online, Spain, 2021 December 13th - 14th
Organizers: Ho Won Jang and Ankur Solanki
Oral, Himangshu Jyoti Gogoi, presentation 009
Publication date: 1st December 2021

Hybrid organic-inorganic perovskite (HOIP) memristors are being studied extensively in recent times as a potential alternative to conventional memory technologies as well as to mimic the function of biological synapse in neuromorphic circuits [1]. In this work, the conduction mechanism and performance of MAPbI3-based memristors have been studied. These devices exhibited an excellent ON/OFF ratio of greater than 103. However, it has been found that measurement procedure brings significant variations in their performance [2]. While the RESET voltage and current significantly increase with scan rate, the ON/OFF ratio increases significantly with compliance current. Also, the forming voltage and ON/OFF ratio decrease with device scaling. In the case of voltage pulse characterization, the ON/OFF ratio can be enhanced by increasing the pulse amplitude and width. Hence, the selection of proper pulse amplitude and width is of utmost importance in achieving high endurance with desired noise margin. Based on these results, a protocol has been identified for the characterization of HOIP memristors to achieve their best possible switching parameters. This protocol is quite general in nature and can be employed for any other memristor structure based on HOIPs as well as on other related materials. Furthermore, the experimental data fitting to a standard SPICE based analytical model indicates that the current conduction is dominated by a tunnelling mechanism in the OFF state and is ohmic in the ON state [3].

The authors would like to acknowledge the funding from Science and Engineering Research Board (SERB) (project no. ECR/2018/000108), Department of Science and Technology (DST) (project no. SR/FST/ET-II/2017/122), and   Ministry   of   Human   Resource and Development (MHRD), Govt. of India, (project no. SPARC/2018-2019/P1097/SL).

© Fundació Scito
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info