Ionic, opto-electronic properties of halide perovskites for neuromorphic applications
Nripan Mathews a b
a Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, Singapore
b NTU Singapore - Nanyang Technological University, School of Materials Science and Engineering, Nanyang Avenue, 50, Singapore, Singapore
Proceedings of International Conference on Perovskite Memristors and Electronics 2021 (ICPME2021)
Online, Spain, 2021 December 13th - 14th
Organizers: Ho Won Jang and Ankur Solanki
Invited Speaker, Nripan Mathews, presentation 010
DOI: https://doi.org/10.29363/nanoge.icpme.2021.010
Publication date: 1st December 2021

Halide perovskites, a family of printable materials with coupled ionic-optoelectronic properties provide a multitude of mechanisms for controlling memristive behaviour. Perovskites are well known for solar cells and light emission, but its ionic activity is unexploited. Due to both ionic and electronic transport within them, a myriad of mechanisms can be exploited to form diffusive and drift perovskite memristors - reversible doping, interfacial reactions, conductive filament formation as well as carrier trapping-detrapping. These mechanisms can be modulated by choice of perovskites, interfacial layers and morphologies. Our group’s efforts in investigation of new materials, their characterisation and deployment in two terminal and three terminal architectures will be covered.

This work is supported by funding from Ministry of Education under project no: MOE2018-T2-2-083.

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