DOI: https://doi.org/10.29363/nanoge.icpme.2021.012
Publication date: 1st December 2021
2D layered perovskites have recently emerged as energy materials due to their improved stability against atmospheric degradation and low-cost solution processing methods.1,2 These materials have been investigated optically and computationally to determine their electron structure and carrier mobility,3 as well as in tandem with traditional 3D perovskites (MAPbI3) for improved interface passivation increasing solar harvesting efficiencies.4 However, up until now, little focus has been on these materials for use as memory storage devices and within IoT.
Herein we report the fabrication of a 2D layered perovskite (PEA)2PbI4 in-situ device, where large single crystals are grown vertically between device contacts using a peripheral evaporation technique.5 This achieves an easy route for encapsulation and improved stability. We show through a series of voltage scans that the devices have two resistance states that are stably switched between over 1000 voltage cycles with the HRS being five times higher than the LRS. Furthermore, we show that these devices are photoresponsive with the ON/OFF ratio decreasing due to increasing light intensity from darkness to 1 Sun intensity, which is restored once returned into the dark. We have also shown that carrier transport varies with the measurement orientation of the device when measured either vertically or laterally. Lateral devices are fabricated via spin-coating in which allows control of the crystallite size via the addition of Tetrahydrothiophene 1-oxide (THTO) thus changing the number of grain boundaries. By performing electrical characterisation during light- and temperature-dependant measurements we observe a photoresistive response in these lateral devices, for the first time allowing the characterisation of ionic transport behaviour in this material.
Newcastle University, EPSRC and UKRI for funding this research
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