RRAM with High Endurance Using All-inorganic Perovskite Quantum Dot
daeun lee a, howon jang a b
a Department of Materials Science and Engineering, Seoul National University, Daehak-dong, Gwanak-gu, seoul, 151-744, Korea, Republic of
b Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229 Republic of Korea
Proceedings of International Conference on Perovskite Memristors and Electronics 2021 (ICPME2021)
Online, Spain, 2021 December 13th - 14th
Organizers: Ho Won Jang and Ankur Solanki
Poster, daeun lee, 016
Publication date: 1st December 2021
ePoster: 

Resistive switching RAM(RRAM) is gaining a lot of attention as alternative for existing memory. While existing memory such as DRAM or NAND flash memory cannot be used as memristor, RRAM can be used as memristor. Moreover, it is expected to have low energy consumption, high efficiency, high speed etc. However, RRAM has a critical problem that degradation of RRAM is easy that it shows poor endurance. To solve this problem, we used all-inorganic perovskite quantum dots, halide perovskite nano particles, as an insulating layer material. Since the switching mechanism, which makes the device as memristor, takes place at the insulating layer, making the insulating layer easy for filaments to form is really important. We expect that the small size of the particle would contribute to the ease of degradation and forming of the filament. Moreover, there is a reason for selecting all-inorganic material. When we use organic material, the thermal stability becomes unstable which means the difficulty in large scale synthesis. Therefore, we are making RRAM with improved endurance using the all-inorganic material, as quantum dots.Resistive switching RAM(RRAM) is gaining a lot of attention as alternative for existing memory. While existing memory such as DRAM or NAND flash memory cannot be used as memristor, RRAM can be used as memristor. Moreover, it is expected to have low energy consumption, high efficiency, high speed etc. However, RRAM has a critical problem that degradation of RRAM is easy that it shows poor endurance. To solve this problem, we used all-inorganic perovskite quantum dots, halide perovskite nano particles, as an insulating layer material. Since the switching mechanism, which makes the device as memristor, takes place at the insulating layer, making the insulating layer easy for filaments to form is really important. We expect that the small size of the particle would contribute to the ease of degradation and forming of the filament. Moreover, there is a reason for selecting all-inorganic material. When we use organic material, the thermal stability becomes unstable which means the difficulty in large scale synthesis. Therefore, we are making RRAM with improved endurance using the all-inorganic material, as quantum dots.

The Inter-University Semiconductor Research Center and Institute of Engineering Research at Seoul National University provided research facilities for this work.

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