Publication date: 1st December 2021
So far, it has been difficult to fabricate thin-film field-effect transistors (TFTs) based on inorganic halide perovskite (IHPs) due to their phase-instability and uncontrollable trap density. Here, the bottom-gate bottom-contact structured p-type TFTs are presented using the optimized IHP in the active layer. The stable cubic-CsPbI3 phase is successfully synthesized by doping bismuth iodide and reduced defect densities by adding potassium bromide. The IHP TFTs based on the tailored cubic-CsPbI3 show high hole mobility of 10 cm2V-1s-1, an on-off current ratio of 103, and a low subthreshold swing voltage of 0.43 Vdec-1. In addition, the operational stability of the fabricated device is demonstrated through the bias stress test. This study suggests that one of the key factors for fabrication an ideal p-type IHP transistor is managing charge transport properties in the IHP layer through defect engineering.
This research was financially supported by the Ministry of Science and ICT (2020M2D8A206983011), the Ministry of Science, ICT & Future Planning (2017R1A2B3009135), and the Future Material Discovery Program (2016M3D1A1027666) through the National Research Foundation of Korea (NRF). This work was supported by the Creative Materials Discovery Program through NRF funded by the Korea government (MSIT) (2017M3D1A1040834). This research was also supported by the Research Institute of Advanced Materials (RIAM), Inter University Semiconductor Research Center (ISRC), and Natioanl Instrumentation Center for Enviornmental Management (NICEM) at Seoul National University.
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