Interfacial reactivity and resistive switching phenomenon in MAPI-based memristors
Mariana Berruet a, José Carlos Pérez-Martínez b, Antonio Guerrero c, Juan Bisquert c
a Instituto de Investigaciones en Ciencia y Tecnología de Materiales (INTEMA), CONICET-UNMdP., J.B. Justo 4302, B7608FDQ, Mar del Plata, Argentina, Argentina
b Electronic Technology Departament, Universidad Rey Juan Carlos
c Institute of Advanced Materials (INAM), Universitat Jaume I (UJI), Avenida de Vicent Sos Baynat s/n, Castelló de la Plana, Spain
Proceedings of International Conference on Perovskite Memristors and Electronics 2021 (ICPME2021)
Online, Spain, 2021 December 13th - 14th
Organizers: Ho Won Jang and Ankur Solanki
Poster, Mariana Berruet, 020
Publication date: 1st December 2021

Since 2015, when it has been found that halide perovskites possess good memristive properties, different materials and structures based on halide perovskites have been applied and several resistive switching mechanisms have been proposed. Among they, conductive filaments formed by the migration of active metal ions and by the migration of halide ions are widely accepted. in this work we show what happens when MAPI perovskite is contacted directly with a reactive electrode on top as silver and how an added thin film of AgI between MAPI and silver affects the resistive switching response. I-V curves and Impedance Spectroscopy (IS) were performed.

The authors want to acknowledge Universitat Jaume I, CONICET and Universidad Rey Juan Carlos for financial support.

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