Interface Chemistry for Organic Electronics and Opto-electronics
Seth Marder a
a School of Chemistry & Biochemistry, Georgia Institute of Technology, US, Georgia 30332-0400, United States
Proceedings of Interfaces in Organic and Hybrid Thin-Film Optoelectronics (INFORM)
València, Spain, 2019 March 5th - 7th
Organizers: Natalie Stingelin, Henk Bolink and Michele Sessolo
Invited Speaker, Seth Marder, presentation 005
DOI: https://doi.org/10.29363/nanoge.inform.2019.005
Publication date: 8th January 2019

Organic semiconductors and hybrid/organic materials have attracted interest for electronic applications due to their potential for use in low-cost, large-area, flexible electronic devices. Here we will report on recent developments pertaining to surface modifiers and both n- and p-dopants that could impact the charge injection/collection processes in organic light emitting diodes, organic field effect transistors, organic photovoltaics and hybrid organic/inorganic perovskite devices. We will also discuss the development of organic and metallo-organic-based dimers as n-dopants and very briefly described metal dithiolene complexes as p-dopants for organic semiconductors including their impact on device performance. The application of n-doping for the development of electron injection layers for organic light emitting diodes (OLEDs) will be highlighted, including their use for doping of electron transport materials which result in high conductivities and in some cases good thermoelectric performance.  In the case of OLEDs, it will be shown that photoactivation can lead to stable doping of materials (i.e. the doping-induced conductivity remains relatively constant over hundreds of hours) beyond the expected thermodynamic limit, which would be predicted based on an assessment of the effective reduction potential of the n-dopant and the reduction potential of the electron transport material.

Selected References:

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“A universal method to produce low work function electrodes for organic electronics,” Science 336 (6079), 327-332 (April 2012, DOI: 10.1126/science.1218829)

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“Reduction of contact resistance by selective contact doping in fullerene n-channel organic field-effect transistors.” Appl. Phys. Lett. 102, 153303-153307 (April 2013, DOI: 10.1063/1.4802237)

“Modification of the fluorinated tin oxide/electron-transporting material interface by a strong reductant and its effect on perovskite solar cell efficiency.” Mol. Syst. Des. Eng. Advance Article (2018, DOI:10.1039/C8ME00031J)

“Production of Heavily n- and p-Doped CVD Graphene with Solution-Processed Redox-Active Metal-Organic Species," Materials Horizons Advance Article (September 2013, DOI: 10.1039/C3MH00035D

“Controllable, Wide-Ranging n-Doping and p-Doping of Monolayer Group 6 Transition-Metal Disulfides and Diselenides.” Adv. Mater. 30, 1802991 (2018, DOI: 10.1002/adma.201802991)

 


 

This material is based upon work supported by the Air Force Office of Scientific Research under award number FA9550-18-1-0499, and by the National Science Foundation under Grant Nos. DMR-1807797 and DMR-1729737. Seth Richard Marder would also like to thank the Alexander von Humboldt Foundation for support of this collaborative work.

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