Publication date: 8th January 2019
Capacitive techniques have been proposed to evaluate impurity and electronic defect densities in hybrid perovskite-based solar cells. Mott-Schottky (MS) analysis and temperature admittance spectroscopy (TAS) are known to address the capacitive response of defects states and traps in classical semiconductors. The first capacitive technique able to determine defect densities and spatial distributions within the perovskite absorber is the well-known and widely-used MS analysis. It has been applied to characterize defects in perovskite solar cells as well. The characterization tool is based on the assumption that a depletion layer is formed in the vicinity of the contact between doped semiconductors and/or metals. Consequently, the so-called depletion capacitance, which value depends on the amount of defects, is modulated by effect of the external bias. The second technique (TAS) interprets the excess capacitance as related to the occupancy of electronic defect states within the band gap of perovskite photovoltaic materials. This technique aims at exploring the density-of-states (DOS) corresponding to defect levels through the shift of the so-called demarcation energy. However, it is also known that perovskite solar cells exhibit a large increment in the measured capacitance at low frequencies, related to the polarization effects at the electrode interface by ionic and electronic charge accumulation. We explore here if such a large low-frequency capacitance has the net effect of masking depletion or defect contributions to the overall capacitive response. These two kinds of capacitive mechanisms (evaluated through MS and TAS techniques) when used to uncritically analyze capacitance data may lead to erroneous outcomes.
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