Publication date: 8th January 2019
Solution-processed Organic field-effect transistors (OFET) are promising for cheap and disposable applications due to their low temperature and large-scale cost-effective production. Charge transfer across the organic/metal interface is seminal in these devices and is generally modulated by interlayers, very thin layers, positioned between the organic semiconductor and the metal contact. Recently, our group suggested a new simple and cost-effective methodology for processing interlayers in organic solar cells by the spontaneous segregation of additives to the electrodes during metal deposition. The interlayers increase the open circuit voltage and improve device performance and stability1, 2. Here we show that this technique can also be implemented in OFET devices. The enhancement of the OFET performance provides insight on the additives contribution to the electronic structure of the interface.
To study the self-generated interlayer formation in OFETs we fabricated p- and n-type bottom gate top contact OFETs based on a p-type and an n-type polymer, DPPT-TT and PNDI(2OD)2T (inset of fig:1a), respectively. To modify the Ag electrode surface, we chose two thiol-capped additives: 4-fluorobenzyl-mercaptan (4-FM)hexa (inset of fig:1b) and (ethyleneglycol)-dithiol (HEG-DT) (inset of fig:1c). Scanning transmission electron microscopy (STEM) and X-ray photoelectron spectroscopy (XPS) confirm additive enrichment at the polymer/Ag interfaces after Ag source and drain deposition. Device measurements and transfer line method (TLM) analysis are used to evaluate the evolution of the contact resistance with interlayer formation. We find that, presence of additive interlayers at the polymer/metal interface noticeably improve the device performance significantly reducing contact resistance. We will show that the self-generated interlayer can be considered as a step forward in realizing cost-effective large area OFETs and other organic electronic devices.
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