DOI: https://doi.org/10.29363/nanoge.inform.2019.041
Publication date: 8th January 2019
Exciton transport dictates the design and operation of a variety of optoelectronic devices based on organic semiconductors. This is particularly true in organic photovoltaic cells (OPVs), where excitons diffuse to a dissociating interface to realize a photocurrent. The sensitivity of OPV performance to the exciton diffusion length (LD) has made these devices a useful platform for the characterization of this important material property. While device photocurrent spectroscopy is a straightforward method to extract LD, it is frequently limited by unknown recombination losses at dissociating interfaces, making the extracted LD a lower bound. We resolve this limitation and demonstrate a general, device-based photocurrent-ratio measurement to extract the intrinsic LD. Since interfacial losses are not active layer specific, a ratio of the donor and acceptor internal quantum efficiencies cancels this quantity, allowing LD to be extracted. The generality of this method is demonstrated by extracting LD for both luminescent and dark organic semiconductors, as well as for both small molecule and polymer active materials. We demonstrate the broader applicability of this approach by also examining semiconductor quantum dots. Finally, we show that with intrinsic measurements of LD, additional device-relevant information can be extracted regarding the efficiency of exciton relaxation and interfacial charge separation processes.
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