Comprehensive Analysis of Third-Generation Solar Cells Supported by Drift-Diffusion Simulations
Simon Züfle a b, Martin Neukom a b, Sandra Jenatsch b, Beat Ruhstaller a b
a Institute of Computational Physics, ZHAW, Wildbachstr. 21, Winterthur, 8401, Switzerland
b Fluxim AG, CH, Katharina-Sulzer-Platz, 2, Winterthur, Switzerland
Proceedings of Interfaces in Organic and Hybrid Thin-Film Optoelectronics (INFORM)
València, Spain, 2019 March 5th - 7th
Organizers: Natalie Stingelin, Henk Bolink and Michele Sessolo
Oral, Simon Züfle, presentation 076
Publication date: 8th January 2019

In order to improve the understanding of the device physics, specifically charge generation, transport and recombination, of organic and perovskite solar cells, a multitude of experimental techniques is available today. In this work we present an overview of opto-electronic characterization techniques including current-voltage curves, impedance spectroscopy, intensity-modulated photocurrent/photovoltage spectroscopy, and various transient experiments such as charge extraction by linearly increasing voltage, transient photocurrent, transient photovoltage and charge extraction. Using our drift-diffusion model we are able to simulate all of the above techniques and investigate how nonidealities like interface barriers, traps or low mobilities can manifest themselves as specific signatures in the data. The combination of different experiments therefore allows us to provide guidelines for the interpretation of measurement results and to unambiguously identify the limiting processes and dominant loss mechanisms. Furthermore, the simulation can be employed inside global fitting routines in order to determine material and device parameters. Hereby we show that the combination of steady-state, transient and modulated techniques is a key to increase the reliability of the extracted parameter values.

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