Photoemission Spectroscopy Study of SnF2 Treated FASnPbI3
Zafer Hawash a, Jorge Ávila b, Ana M. Igual b, Pablo P Boix b, Henk J Bolink b, Ellen Moons a
a Department of Physics and Electrical Engineering, Karlstad University, Universitetsgatan, 2, Karlstad, Sweden
b Instituto de Ciencia Molecular (ICMol), Universitat de València
Proceedings of Interfaces in Organic and Hybrid Thin-Film Optoelectronics (INFORM)
València, Spain, 2019 March 5th - 7th
Organizers: Natalie Stingelin, Henk Bolink and Michele Sessolo
Poster, Zafer Hawash, 093
Publication date: 8th January 2019

Hybrid organic-inorganic perovskites (HOIPs) with 50% Pb substituted by Sn have an ideal band gap of about 1.3 eV [1]. For better performance of Sn based HOIPs, SnF2 is often added [2]. In addition, HOIPs that employ formamidinium (FA) cations have better thermal stability than the often employed methylammonium (MA) cations HOIPs [3]. Therefore, FAPbSnI3 is selected to be the base of this study. The evolution of electronic and chemical properties of FAPbSnI3 as a function of SnF2 treatment is investigated using X-ray Photoemission Spectroscopy (XPS) and Ultraviolet Photoemission Spectroscopy (UPS) to study the surface electronic and chemical properties. Similarly, the effect ambient air exposure on the SnF2 films is also investigated.

It is found that any chemical changes of Sn core levels strongly affect the electronic properties of the film's surface. This is corelated with the shallow valence electrons of Sn element. Therefore, any chemical changes related to Sn element at the surface of the perovskite shows clear and strong effect on the energetics of the perovskite film.

European Commission SOLAR-ERA-NET.

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