Exploring the Effect Induced by Hole Transport Layers in Inverted Halide Perovskite Solar Cells
DHRUBA B. KHADKA a b, Yasuhiro Shirai b, Masatoshi Yanagida b, Kenjiro Miyano b
a International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba,, Ibaraki, Japan
b Global Research Center for Environment and Energy based on Nanomaterials Science (GREEN), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference on Perovskite and Organic Photovoltaics and Optoelectronics (IPEROP19)
Kyōto-shi, Japan, 2019 January 27th - 29th
Organizers: Hideo Ohkita, Atsushi Wakamiya and Mohammad Nazeeruddin
Oral, DHRUBA B. KHADKA, presentation 029
DOI: https://doi.org/10.29363/nanoge.iperop.2019.029
Publication date: 23rd October 2018

Although the fabrication techniques for halide perovskite solar cells have made startling progress with device efficiency 23% exceeding, the underlying device physics is not still well understood.[1,2] Since the carrier transport layers (CTLs) influence on the performance and stability of perovskite solar cells (PSCs).[3,4] It is imperative to investigate the characteristic impacts on HaPSC induced by the CTL to shade light on some of the key factors underlying the device physics. In this work, we will discuss the impacts of nature of the hole transport layer (HTL) (organic/inorganic HTLs) in PSCs by analyzing the elemental distribution, current-voltage characteristics, and capacitance spectroscopy. The organic HTL device exhibits a lower activation energy which indicates a dominant interface mediated recombination.[5] The admittance analysis reveals that the device with the inorganic HTL induces rather deep trap and higher trap densities. This is found to be induced from the diffusion of metal cations into the perovskite during its crystallization upon the inorganic HTLs. Our analysis suggests  that the passivation of deep defect and suppression of trap densities in the HaP either using ideal CTLs or optimizing the fabrication route is crucial to improving the device parameters approaching the theoretical limit.

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