Proceedings of International Conference on Perovskite and Organic Photovoltaics and Optoelectronics (IPEROP19)
DOI: https://doi.org/10.29363/nanoge.iperop.2019.029
Publication date: 23rd October 2018
Although the fabrication techniques for halide perovskite solar cells have made startling progress with device efficiency 23% exceeding, the underlying device physics is not still well understood.[1,2] Since the carrier transport layers (CTLs) influence on the performance and stability of perovskite solar cells (PSCs).[3,4] It is imperative to investigate the characteristic impacts on HaPSC induced by the CTL to shade light on some of the key factors underlying the device physics. In this work, we will discuss the impacts of nature of the hole transport layer (HTL) (organic/inorganic HTLs) in PSCs by analyzing the elemental distribution, current-voltage characteristics, and capacitance spectroscopy. The organic HTL device exhibits a lower activation energy which indicates a dominant interface mediated recombination.[5] The admittance analysis reveals that the device with the inorganic HTL induces rather deep trap and higher trap densities. This is found to be induced from the diffusion of metal cations into the perovskite during its crystallization upon the inorganic HTLs. Our analysis suggests that the passivation of deep defect and suppression of trap densities in the HaP either using ideal CTLs or optimizing the fabrication route is crucial to improving the device parameters approaching the theoretical limit.
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