Proceedings of International Conference on Perovskite and Organic Photovoltaics and Optoelectronics (IPEROP19)
DOI: https://doi.org/10.29363/nanoge.iperop.2019.072
Publication date: 23rd October 2018
The room-temperature charge carrier mobility and excitation-emission properties of metal halide perovskites are governed by the electronic band structure and intrinsic lattice phonon scattering mechanisms. Establishing how charge carriers interact within this scenario will have far-reaching consequences for developing high-efficiency materials for optoelectronic applications [1]. In this presentation, we evaluate the charge carrier scattering properties and conduction band environment of the double perovskite Cs2AgBiBr6 through a combinatorial approach; single crystal X-ray diffraction, optical excitation and temperature dependent emission spectroscopy, resonant and non-resonant Raman scattering, further supported by first principles calculations. We identify deep conduction band energy levels and that scattering from longitudinal optical phonons – via the Frӧhlich interaction – dominates electron scattering at room temperature, manifesting within the nominally non-resonant Raman spectrum as multiphonon processes up to the fourth order (Figure 1). We measure a Frӧhlich coupling constant nearing 230meV[2], which is inferred from a temperature dependent emission linewidth analysis. When compared to other more popular lead halide perovskites (40 - 60 meV [3]), the value measured here is giant, highlighting the fundamentally different nature of the two “single” and “double” perovskite materials branches.
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