High sensitivity photodetector based on a metal complex hybridized structure with perovskite absorbers
Ayumi Ishii a, Tsutomu Miyasaka b
a PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan.
b Graduate School of Engineering, Toin University of Yokohama, 1614, Kuroganecho, Aoba, Yokohama 225-8503, Japan.
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference on Perovskite and Organic Photovoltaics and Optoelectronics (IPEROP19)
Kyōto-shi, Japan, 2019 January 27th - 29th
Organizers: Hideo Ohkita, Atsushi Wakamiya and Mohammad Nazeeruddin
Oral, Ayumi Ishii, presentation 084
DOI: https://doi.org/10.29363/nanoge.iperop.2019.084
Publication date: 23rd October 2018

High sensitive photodetection with large amplified photocurrent (gain) has been generally achieved by photoelectron emission or avalanche effect in inorganic photodetectors such as Si and GaAs, which needs a sufficiently strong external electric field (ca. 100 V). Here, we demonstrate a high-gain and low-voltage photodetector with an organic-inorganic hybrid structure composed of an interfacial perovskite layer between an organic compound coordinating Europium (Eu) and TiO­2 mesoporous film. The devise achieves significantly high incident photon to current efficiency of 2.9 × 105% (gain value of 2900) with the highest level of responsivity up to 1289 A/W even under low applied bias -0.5 V and low irradiation light (< 1 mW/cm2), which is more than four orders of magnitude larger than those of inorganic photodetectors. Such high performance of the detector is caused by photomultiplication phenomena at the specific interface composed of the perovskite and Eu complex thin-film layers. The perovskite thin layers are excited by visible light irradiation, and their electrons transfer to the conduction band of TiO2 under the applied reverse bias, whereas the holes are trapped at the interface between perovskite and Eu complex layers. The trapped holes are accumulated at the interface between perovskite and Eu-terpy complex, which results in buildup of a high electric field at the interface. Finally, a large external tunneling injection of electrons occurs from the Ag electrode, and the incident photon to current efficiency of the device exceeds 105% even under low applied bias -0.5 V.

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