Proceedings of International Conference on Perovskite and Organic Photovoltaics and Optoelectronics (IPEROP19)
Publication date: 23rd October 2018
The distribution of trap states within the perovskite vicinity is the primary factor which causes carrier dynamics inferiority and low photovoltaic performances. Two important criterions are to be emphasized in this work, which are first to investigate the role of SnF2 in suppressing Sn vacancy and secondly, to elucidate the effect of Ge dopant over the trap states and charge transport within the perovskite solar cell, which are revealed through thermally stimulated current (TSC) and its complementary analyses.
The suppression of Sn2+ oxidation process is proven through the XPS analysis where the Sn2+/Sn4+ ratio has substantially reduced upon the addition of SnF2. Corroboratory, weight loss at 150 ºC observed from the thermogravimetric profile of FMSI(0) without SnF2 has again emphasized the impact of SnF2 addition. From the viewpoint of trap density, we found that the addition of 5 mole percent Ge has significantly reduced the total trap densities from 1.93x1021 cm-3 (without Ge) to 1.80x1017 cm-3. Interestingly, the FMSGI(5) perovskite exhibits indistinguishable trap densities profile from that of MAPbI3 perovskite and exhibits a long charge diffusion length and high mobility of 1 μm and 98.27 cm2V-1s-1, respectively. In addition, the 5 mole% Ge-doped perovskite exhibited long-lived carrier lifetime of Ʈavg = 5.09 ns than the perovskite without Ge dopant (Ʈavg = 3.51 ns), implies the effectiveness of Ge in passivating the trap states. This work provides deep intuitive on trap landscape, which is important for the performance enhancement of lead free perovskite solar cells.
This research was supported by JST MiraiProgram
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