Ultrafast screening of lead-free perovskites and their optoelectronic properties
Ryosuke Nishikubo a, Akinori Saeki a b
a Department of Applied Chemistry, Graduate school of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan.
b PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan.
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference on Perovskite and Organic Photovoltaics and Optoelectronics (IPEROP19)
Kyōto-shi, Japan, 2019 January 27th - 29th
Organizers: Hideo Ohkita, Atsushi Wakamiya and Mohammad Nazeeruddin
Poster, Ryosuke Nishikubo, 116
Publication date: 23rd October 2018

    Development of lead-free perovskites is an important task because of the environmental and economical advantages. However, tin-based perovskite, one of the most plausible candidates, suffers significant oxidation from Sn(II) to Sn(IV)[1], which strictly limits the power conversion efficiency (PCE) and stability. On the other hand, there are some reports of bismuth and antimony-based materials as the next lead-free perovskites with PCE 37%. 

    Although several material designs of bismuth and antimony-based materials such as A3Bi2X9, A2AgBiX6, and ASbSI2 are reported, the most promising material has remained unknown . In this work, we performed systematic exploration of these materials by using ultrafast screening technique: time-resolved microwave conductivity (TRMC)[2]. From TRMC measurement, charge carrier mobility, lifetime, and transfer yield to electron/hole transport layer (ETL/HTL) are obtained, which are key parameters of photovoltaics. Photoelectron yield spectroscopy (PYS) and other fundamental studies have been also conducted to investigate their electrochemical properties. Based on these results, we found that ASbSI2 (A = Cs, CH3NH3) is a potentially high-performing material because of efficient charge transfer to ETL/HTL and moderate valence band maxima (5.5 eV). Although the obtained PCE of ASbSI2 device was still low (0.92%), it was much higher than our reference A3Sb2I9 cell (~0.10%). Our work provides a new prospect for the next-generation lead-free perovskites.

 

    

© Fundació Scito
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info