Methylammonium Bismuth Iodide-Based Multilevel Data Storage Memory Devices with Long-Term Stability
Bohee Hwang a, Jang-Sik Lee a
a POSTECH
Poster, Bohee Hwang, 128
Publication date: 23rd October 2018

Organic-inorganic hybrid perovskites (OHPs) have been used for resistive switching memory since the memory with OHPs have high on/off ratio, low set voltage, and multilevel property [1-5]. However, the major concerns of perovskite materials are the toxicity of lead and the lack of long-term stability, which inhibit their practical applications. Thus, nontoxic and stable photovoltaic alternatives including bismuth-based materials have emerged as a possible candidate for various applications such as solar cell absorbers, super capacitors. In this presentation, we will show the demonstration of a resistive switching memory device based on a methylammonium bismuth iodide (MBI). The resistive switching layer can be easily prepared by solvent engineering. The resistive switching memory based on MBI layers has reliable endurance, retention properties, and fast switching speed, as well as environmental stability. Specifically, this study reports that MBI has a great potential to be applied in emerging nonvolatile memory devices with long-term stability without encapsulating layers. Moreover, modulating the compliance current leads to multilevel data storage. This work suggests an approach to achieve the applications of bismuth-based perovskites in information storage devices.

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