Proceedings of International Conference on Perovskite and Organic Photovoltaics and Optoelectronics (IPEROP19)
Publication date: 23rd October 2018
Recently, CsPbI3 nanocrystals (NCs) drive a sustained research interest toward various optoelectronic devices such as solar cells, light emitting diodes, luminescent solar concentrators, photodetectors, and lasers, due to their exceptional physico-chemical properties. Unfortunately, these CsPbI3 NCs still require several challenges related to long-term stability upon prolonged exposure to light, humidity, and high temperature to be addressed, as well as the improvement of charge transfer at the interface. In the present study, we proposed an in-situ growth method to prepare preferential-assembled, well-distributed and quasi-two-dimensional characteristic α-CsPbI3 NCs/x-rGO heterostructures. Owing to the excellent thermal conductivity, carrier mobility, hydrophobic nature and passivation effect, moderate concentration of rGO could reduce the ligands on the surface of α-CsPbI3 NCs, provide protection against air and moisture, and can enhance the carrier separation, transport out of the nanocrystals. The homogeneous growth of nanocrystals and their quasi-two-dimensional distribution along the surface of rGO also improve the stability and carrier transport property compared to α-CsPbI3 NCs. More interestingly, we also demonstrated an inkjet printing pattern using these α-CsPbI3 NCs/x-rGO heterostructures as optically active materials, manifesting that these heterostructures possess a favorable dispersibility in organic solvents and excellent fluorescence application in other optoelectronic devices.
This work was financially supported by the Projects of International Cooperation and exchanges NSFC (51561145007), the Israel Science Foundation ISF-NSFC program, the National Natural Science Foundation of China NSFC (51702038), the National Energy Novel Materials Center (NENMC-II-1705), and by the Ministry of Science & Technology, P.R.China: Sino-Italy International Cooperation on Innovation (2016YFE0104000).
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