Sb2S3 Solid State Solar Cells with Inverse Opal nanostructured TiO2
Yasuha Yoshihara a, Taro Toyoda a, Shuzi Hayase b, Qing Shen a
a The University of Electro-Communications, Japan
b The University of Kyushu-institute, Japan
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference on Perovskite and Organic Photovoltaics and Optoelectronics (IPEROP19)
Kyōto-shi, Japan, 2019 January 27th - 29th
Organizers: Hideo Ohkita, Atsushi Wakamiya and Mohammad Nazeeruddin
Poster, Yasuha Yoshihara, 147
Publication date: 23rd October 2018

    Organic-inorganic hybrid photovoltaic is a candidate of next generation solar cells because it has the advantages of high stability and low cost. Sb2S3 has attracted much interest as the absorbing layer because of its large absorption coefficient and environmentally-friendly characteristics. In addition, titanium oxide (TiO2) has an important role as a substrate of the sensitizer as well as an electron transporting layer (ETL). Among several different structures of TiO2 ETLs such as nanoparticle structure, nanowire and nanorod, inverse opal (IO) is a honeycomb-like structure. One of the notable features of the IO-TiO2 is that a higher open circuit voltage (Voc = 0.7 V) can be achieved when it is used as an ETL in sensitized solar cells compared to the conventional nanoparticle structured TiO2 ETL[1]. Therefore, Sb2S3 solid state solar cells with IO-TiO2 ETLs, i.e., FTO/CL/IO-TiO2/ Sb2S3/P3HT has a potential to achieve high photovoltaic performance. Here, CL refers to a compact layer made from TiO2 and P3HT is an organic hole transporting layer.  

    However, IO-TiO2 is so fragile that we need to keep the organized structure to maintain the high Voc. Therefore, to investigate the factor which deforms the IO-TiO2 structure, we design two kinds of new device structures: FTO/CL/IO-TiO2/P3HT and FTO/CL/Sb2S3/P3HT and compare them with the original device structure. By comparison of the photovoltaic properties of these devices, we find that inhomogeneous Sb2S3 causes the deformation of the IO-TiO2 structure. Moreover, some interesting results are obtained. For example, the device with IO- TiO2 shows high Voc in spite of low short circuit current density (Jsc). In the presentation, we will discuss in detail in terms of the equivalent circuit of the solar cells.

  

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