SURFACE MODIFICATION OFNICKEL OXIDE HOLE TRANSPORT LAYER FOR THE PEROVSKITE SOLAR CELLS
Masatoshi Yanagida a, Dhruba B. Khadka a, Yasuhiro Shirai a, Kenjiro Miyano a
a Photovoltaic Materials Group, Center for GREEN Research on Energy and Environmental Materials, National Institute for Materials Science (NIMS), 1 Chome Namiki, Tsukuba, Japan
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP23)
Kobe, Japan, 2023 January 22nd - 24th
Organizers: Seigo Ito, Hideo Ohkita and Atsushi Wakamiya
Poster, Masatoshi Yanagida, 056
Publication date: 21st November 2022

Inverted perovskite solar cells consisted of ITO (Indium tin oxide) / NiO(Nickel oxide) / Perovskite/ PC60BM (phenyl-C61-butyric acid methyl ester) / AZO (Aluminum doped zinc oxide) / Ag has been investigated [1,2] and are highly stable for continuous 1 SUN illumination [3,4]. For improvement the efficiency, the surface modification of NiOX surface has been also investigated using CsBr [5] and 2-(3,6-dimethoxy-9H-carbazol-9-yl) ethyl] phosphonic acid (MeO-2PACz). [6] The surface modification of MeO-2PACz on sputtered NiOX (See the scheme) not only protects the reaction between NiOand perovskite but also passivates the surface defects. Because MeO-2PACz also acts as hole transport layer, the pin holes of NiOX layer should be filled by MeO-2PACz. To clarify the effect of MeO-2PACz on the property of NiOX hole transport layer, we investigated the NiOX thickness dependent photovoltaic performance of the perovskite solar cells with (w) or without (w/o) surface modification of MeO-2PACz on NiOX. Especially, we estimated the internal quantum efficiency (IQE) of the perovskite solar cells by measuring the external quantum efficiency (EQE) and reflectance spectroscopy.

This work was partially supported by JSPS KAKENHI Grant number 22H02189.

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