Temperature controlled investigation of charge transport and recombination in PbS colloidal quantum dot solar cells
Aneta Andruszkiewicz a, Erik Johansson a
a Department of Chemistry − Ångström Laboratory, Physical Chemistry, Uppsala University, Sweden, Sweden
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP23)
Kobe, Japan, 2023 January 22nd - 24th
Organizers: Seigo Ito, Hideo Ohkita and Atsushi Wakamiya
Poster, Aneta Andruszkiewicz, 078
Publication date: 21st November 2022

Lead sulfide colloidal quantum dots (PbS CQD) have took a firm position as part of the optoelectronic applications, such as next generation photovoltaics.1 They offer multiple valuable properties like high stability and infrared absorption or low cost and solution processability. Though, in particular the broad optical absorption, size-tunable bandgaps (0.5 – 2.0 eV) and multiple exciton generation, makes them attractive candidates for effective and durable solar cells. Over the past years, a great improvement in the photovoltaic performance of PbS CQD devices was observed. Better CQD solar cells have been made possible by an increased understanding of the material properties like effects of surface passivation2, band engineering or charge dynamics3 in CQD films.4 In this study we will investigate the carrier dynamics in PbS CQD devices utilizing mixed halide passivation of PbS quantum dot of two different sizes (1.3 eV and 1.07 eV). Main focus will be put on temperature controlled transient photocurrent and photovoltage decay measurements in devices of following structure: Indium doped tin oxide (ITO)/Aluminum doped zinc oxide (AZO)/Mixed-halide passivated PbS CQD/1,2-ethanedithiol passivated PbS CQD/Gold. Combined with other substantial measurements it will provide an insight to better understanding of the charge transport and recombination under broad temperature range from 15-130°C, together with possible defects and trap state formation in these devices and expectantly allow for future improvement in device engineering.

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