Synthesis Approaches for TiNX–ZrNX (X = Cl, Br, I) Semiconductors with Tunable Bandgaps for Pb-Free Optoelectronic Applications
Ivan Turkevych a
a National Institute of Advanced Industrial Science and Technology (AIST)
Proceedings of Asia-Pacific Conference on Perovskite, Organic Photovoltaics&Optoelectronics (IPEROP25)
Kyoto, Japan, 2025 January 19th - 21st
Organizers: Atsushi Wakamiya and Hideo Ohkita
Poster, Ivan Turkevych, 051
Publication date: 4th October 2024

The neurotoxicity of Pb-based hybrid perovskites raises profound concerns about their application in consumer electronics, wearable photovoltaics (wPV), building-integrated photovoltaic (BIPV), as well as in light-emitting technologies, including LED displays and lighting modules. The World Health Organization (WHO) has acknowledged that no level of Pb exposure is considered safe for children. This drives the demand for non-toxic, Pb-free semiconductors for future optoelectronic applications. The ZNX family (Z=Zr, Ti; X = Cl, Br, I) presents a promising class of lead-free semiconductors with favorable optoelectronic properties. These materials crystallize in alpha and beta phases, with the alpha phases exhibiting direct band gaps ranging from 0.4 to 2.4 eV for TiNX-ZrNX alloys, which makes them particularly promising for photovoltaic applications. Despite their potential, these materials remain significantly underexplored. In my presentation, I will examine the untapped potential of the TiNX–ZrNX system, focusing on feasible synthesis routes for these materials and illuminating their prospects for optoelectronic applications.

This work was partially supported by JSPS KAKENHI Grant Number 21K05250.

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