Fabrication of Perovskite Thin Films Using DMF-free solvent without antisolvent method and Application to Perovskite Solar Cells
Ryo ishikawa a
a Saitama University, 255 Shimo-Okubo, Sakura, Saitama, 338, Japan
Proceedings of Asia-Pacific Conference on Perovskite, Organic Photovoltaics&Optoelectronics (IPEROP25)
Kyoto, Japan, 2025 January 19th - 21st
Organizers: Atsushi Wakamiya and Hideo Ohkita
Poster, Ryo ishikawa, 061
Publication date: 4th October 2024

Metal halide perovskites used in perovskite solar cells (PSCs) achieve impressive power conversion efficiencies (PCEs) of up to 26.7%.1 Recent advances have improved PCEs in small-area PSCs and larger devices, including 1 cm² area and modules. These achievements are due to the unique properties of perovskite films, including micron-scale carrier diffusion lengths and strong optical absorption across the ultraviolet to near-infrared spectrum.

N,N-dimethylformamide (DMF) has been the primary solvent used for depositing perovskite thin films in combination with the antisolvent method. Although effective, this process has significant drawbacks: DMF's carcinogenicity, the environmental impact of using large quantities of antisolvents such as toluene and chlorobenzene, and the technical expertise required.

Our previous work established a technique for fabricating large-grain, highly crystalline perovskite thin films without employing the antisolvent method. This method utilized DMF as the primary solvent, complemented by a high-boiling-point, low vapor pressure auxiliary solvent, and a Lewis base.2~5

This study advances our prior findings by employing 2-methoxyethanol, a non-carcinogenic auxiliary solvent, alongside additives to achieve smooth, highly crystalline thin films without using the antisolvent method. The solar cell performance of devices with ITO or FTO / PFN /SnO₂ / perovskite / Spiro-OMeTAD / Ag configurations will be presented.5

This work was supported by the Grant-in-Aid for Scientific Research (C) from the Japan Society for the Promotion of Science (JSPS) [grant number 23K03921].

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