Facile Synthesized Dopant-Free Spiro-Type Hole-transporting materials for Efficient and Stable Perovskite Solar Cells
Nobuko Onozawa-Komatsuzaki a, Daisuke Tsuchiya b, Shinichi Inoue b, Atsushi Kogo a, Takurou N. Murakami a
a National Institute of Advanced Industrial Science and Technology (AIST)
b Nippon Fine Chemical Co., Ltd.
Proceedings of Asia-Pacific Conference on Perovskite, Organic Photovoltaics&Optoelectronics (IPEROP25)
Kyoto, Japan, 2025 January 19th - 21st
Organizers: Atsushi Wakamiya and Hideo Ohkita
Poster, Nobuko Onozawa-Komatsuzaki, 065
Publication date: 4th October 2024

Hole-transporting materials (HTMs) play an important role in charge extraction, interfacial recombination, and device stability in perovskite solar cells (PSCs). For example, 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamino)-9,9'-spirobifluorene (Spiro-OMeTAD) is one of the most frequently used HTMs. However, dopants such as lithium bis(trifluoromethylsulfonyl)imide are necessary to achieve high power-conversion efficiency (PCE), and these dopants have been speculated to cause severe instability issues in PSCs [1, 2].

 In recent years, dopant-free organic HTMs have emerged as highly desirable materials for stable and efficient n–i–p-type PSCs; however, the literature contains relatively few reports of such dopant-free organic HTMs. Furthermore, the synthesis of dopant-free organic HTMs is often said to lead to further complications. In this time, we newly synthesized spiro-type HTMs SF67 and SF71, which are nondoped HTMs with N,N-dimethylamino substituents and halogen as electron-donating and -withdrawing groups, respectively. The advantage of SF67 and SF71 is that they can be synthesized in two steps from commercially available precursors. By introducing two substituents with different electronic properties, the highest occupied molecular orbital (HOMO) could be adjusted to an energy level suitable for PSCs. Moreover, both SF67 and SF71 can cover the surface of the perovskite uniformly without forming pinholes. They also exhibit superior hole extraction ability compared with spiro-OMeTAD. Consequently, the PCEs of devices based on SF67 and SF71 were 19.6% and 19.5%, respectively. In addition, the thermal stability of the PSCs based on nondoped SF67 and SF71 at 85 °C in ambient air was superior to that of a PSC based on nondoped Spiro-OMeTAD. Therefore, both SF67 and SF71 are expected to be effective high-performance dopant-free HTM s for PSCs [3].

 

Stability test of this research was partly supported by the New Energy and Industrial Technology Development Organization (NEDO, JPNP21016).

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