A novel method to predict the lifetime of perovskite solar cells in a day using the Arrhenius plot obtained from J-V measurements after light irradiation at elevated temperatures up to 105 °C
Motoshi Nakamura a, Ching Chang Lin a, Hiroki Sugimoto a
a PXP Corporation, Japan
Proceedings of Asia-Pacific Conference on Perovskite, Organic Photovoltaics&Optoelectronics (IPEROP25)
Kyoto, Japan, 2025 January 19th - 21st
Organizers: Atsushi Wakamiya and Hideo Ohkita
Poster, Motoshi Nakamura, 067
Publication date: 4th October 2024

Perovskite solar cells (PSCs) are one of the most promising photovoltaic technologies and have made extraordinary advances in production efficiency and processing simplicity. The possibility of replacing the extensively used silicon-based solar cells with PSCs has triggered considerable research interest in this unprecedented photovoltaic. The power conversion efficiency (PCE) of PSCs already exceeds that of the existing Si and other solar cells at the laboratory scale. However, further improvements in durability are essential for practical application. To assess the durability of the fabricated PSCs, it is a common practice to test them for more than 1000 h in a harsh environment. However, these long testing times impede the research and development in this field. In this study, PSCs were exposed to 1-Sun (100 mW/cm2) irradiation for 24 h at elevated temperatures (65–105 °C) under open circuit conditions, and T90 (time required to reach 90% of the initial PCE) at each temperature was determined. Interestingly, the coefficient of determination (R2) of the Arrhenius plot was 0.97, indicating that the degradation of PSCs is likely to proceed by the same mechanism at elevated temperatures up to 105 °C. Based on the slope of the Arrhenius plot, the time of the durability test can be reduced by one-half to one-third by increasing the heating temperature by every 10 °C, thus accelerating the development of highly durable devices. The T90 value at 45 °C, which is a typical nominal operating cell temperature of photovoltaic modules, for our unencapsulated baseline PSC, FTO/SnO2/FAPbI3/PTAA/Au, is calculated to be ~500 h. This method paves way for accelerating the development of high-durability technology in the future through passivation, doping, and encapsulation.

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