Incorporation of DBU Dopant to Optimize PEDOT:PSS Hole Transport Layer in Sn-Pb Perovskite Photodetectors
Kai-Chun Chang a, Zhong-En Shi b, Hsing-Jung Hsieh a, Chih-Ping Chen b, Chieh-Ting Lin a
a Department of Chemical Engineering, National Chung Hsing University, 145 Xingda Road, Taichung 402, Taiwan.
b Department of Materials Engineering, Ming Chi University of Technology, New Taipei City, 24301, Taiwan.
Oral, Kai-Chun Chang, presentation 023
Publication date: 5th November 2025

Tin–lead (Sn–Pb) perovskites have emerged as highly promising materials for near-infrared (NIR) perovskite photodetectors (PPDs) due to their broad light absorption and superior NIR responsivity.[1] However, the heavily doped hole transport layer (HTL), PEDOT:PSS, often causes severe interfacial recombination, thus limiting device performance.[2] To overcome this challenge, we introduce a simple yet efficient dedoping strategy utilizing 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU) to modulate the electronic properties of PEDOT:PSS and enhance overall device efficiency.[3],[4] Comprehensive analyses, including UV–Vis–NIR spectroscopy, Raman characterization, electrical testing, and surface potential mapping, are conducted to systematically optimize the dedoping effect. The DBU treatment effectively passivates interfacial traps, suppresses nonradiative recombination, and promotes improved perovskite crystallinity. As a result, the dedoped PEDOT:PSS-based photodetectors exhibit remarkably reduced dark current, outstanding detectivity up to 10¹⁴ Jones in the 380–960 nm range, and a broad linear dynamic range (LDR) of 84.5 dB. This facile dedoping strategy not only boosts device performance but also offers a practical pathway for developing high-efficiency NIR perovskite photodetectors.

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