Publication date: 5th November 2025
Transparent conductive oxide (TCO) layers are essential components in a wide range of photovoltaic (PV) technologies—including thin-film devices, silicon heterojunction solar cells, and perovskite photovoltaics—because they simultaneously provide high optical transparency and efficient electrical conduction [1]. Among the available TCO materials, indium tin oxide (ITO) remains the most widely employed due to its excellent optoelectronic properties. However, its reliance on indium, a scarce and costly element, together with concerns about toxicity, poses limitations for large-scale manufacturing and long-term sustainability. Consequently, substantial research efforts are directed toward developing TCO alternatives based on earth-abundant elements that can achieve performance comparable to ITO [2]. In this work, we present a new TCO material consisting of zinc oxide (ZnO) doped with an earth-abundant metallic element, deposited using the atomic layer deposition (ALD) technique. Our results shows that the developed TCO films shows remarkable electrical conductivity alongside high optical clarity, highlighting its potential as a viable ITO substitute for future optoelectronic device applications.
This work was funded by MICIU/AEI/10.13039/501100011033 and by the European Union ERDF/EU under grant numbers PID2022-138434OB-C51/C52/C53 (SCALING). The Càtedra Chip UPC project has received funding from the Spanish Ministry, Ministerio para la Transformación Digital y de la Función Pública, and the European Union – Next Generation EU, aid file TSI-069100-2023-0015.
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