Exploiting Perylene- and Naphthalene-Based Planar Aromatic n-Type Dopants for SWCNT Cathodes in Inverted Perovskite Solar Cells
Achmad Syarif Hidayat a, Naoki Ueoka a, Hisayoshi Oshima b, Yoshimasa Hijikata c, Yutaka Matsuo a b
a Department of Chemical Systems Engineering, Graduate School of Engineering, Nagoya University, Nagoya, Aichi, Japan.
b Institute of Materials Innovation, Institutes of Innovation for Future Society, Nagoya University, Nagoya, Aichi, Japan.
c Advanced Research and Innovation Center, DENSO CORPORATION, Kariya, Aichi, Japan.
Poster, Achmad Syarif Hidayat, 070
Publication date: 5th November 2025

Inverted perovskite solar cells (PSCs) with a planar p–i–n architecture are promising for high-efficiency PSCs [1]. However, their conventional metal cathode limits their stability and flexibility for practical device applications. Single-walled carbon nanotubes (SWCNTs) exhibit high conductivity, flexibility, and tunable electronic properties, making them an appealing option for next-generation electrodes. However, their inherent p-type character and unfavourable work function relative to the perovskite conduction band constrain their use as cathodes in PSCs [2]. We demonstrated that organophosphorus molecular dopants could convert intrinsically p-type FCCVD-grown single-walled carbon nanotube (SWCNT) films into stable n-type cathodes, enabling efficient inverted PSCs with doped SWCNT/PCBM electrodes [3]. Nevertheless, organophosphorus dopants often suffer from relatively weak interfacial contact with the SWCNT network, limited π–π interactions due to their non-planar σ-bonding frameworks, and potential dedoping or degradation under prolonged operation. Building on this molecular n-type doping concept, we therefore explored a molecular design strategy based on planar aromatic dopants to clarify their role in SWCNT doping and their effect on device performance.

Here, we employ three π-conjugated n-type dopants, two perylene diimide derivatives (PDIN and PDINBr2) and one naphthalene diimide derivative (NDIN), to modulate the electronic properties of SWCNT films and optimize their energy-level alignment with the perovskite absorber and PCBM interlayer. Near-infrared absorption, Raman spectroscopy, and Seebeck measurements confirm a clear p- to n-type conversion for all dopants, accompanied by an increase in electron carrier concentration. Photoelectron yield spectroscopy reveals a substantial change in the SWCNT work function, bringing it closer to the PCBM LUMO level. Density functional theory calculations further reveal strong interfacial charge transfer and favorable frontier orbital alignment, with the planar perylene core and electron-withdrawing bromine substituents in PDINBr2 providing the most pronounced doping effect. When implemented as cathodes in inverted PSCs (glass/ITO/PEDOT:PSS /MAPbI3/PC60BM/n-doped SWCNT), doped SWCNT electrodes exhibit significantly improved photovoltaic performance compared with undoped SWCNT devices. The champion device based on PDINBr2-doped SWCNT achieves a power conversion efficiency (PCE) of 10.12%. Microwave photoconductivity decay analyses indicate that the optimized planar aromatic dopants reduce interfacial recombination and enhance electron extraction at the perovskite/PCBM/SWCNT junction. This work demonstrates a novel strategy for utilizing planar aromatic molecular dopants to enable SWCNTs as cathodes, paving the way for versatile, high-performance carbon nanotube–based electrodes in next-generation perovskite photovoltaics. Part of these findings has been published in EES Solar, Royal Society of Chemistry [4].

This work was supported by JST CREST, Grant Number JPMJCR25A4, JST SPRING, Grant Number JPMJSP2125 and JSPS KAKENHI, Grant Numbers 23H05443 and 21KK0087. The author would like to take this opportunity to thank the “THERS Make New Standards Program for the Next Generation Researchers” and “KDDI Foundation” for the tremendous financial support. The computation was performed using Research Center for Computational Science, Okazaki, Japan (Project: 25-IMS-C287, 24-IMS-C410).

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info