Publication date: 5th November 2025
This study presents a new synthesis strategy for the chemical bath deposition (CBD) of tin oxide (SnO₂), addressing long-standing challenges associated with incomplete ion oxidation and defect formation under oxygen-deficient conditions.[1] By introducing an excess ligand–assisted growth route, we achieve rapid and controlled nucleation of SnO₂, enabling the formation of high-quality electron transport layers (ETLs) with substantially reduced defect densities. This engineered SnO₂ exhibits highly favorable optoelectronic characteristics, including a low surface recombination velocity below 5.5 cm s⁻¹ and a photoluminescence quantum yield of 24%, both of which contribute to significantly improved interfacial carrier dynamics in perovskite devices.
When incorporated into perovskite solar cells (PSCs), the optimized SnO₂ ETL enables a certified power conversion efficiency exceeding 26%, approaching the performance of state-of-the-art single-crystal silicon photovoltaics. The reduced electronic disorder further enhances device stability and open-circuit voltage (Voc), demonstrating the critical relevance of ETL engineering for next-generation perovskite optoelectronics.
Beyond photovoltaics, the excess ligand-engineered SnO₂ layer also facilitates the development of high-efficiency perovskite light-emitting diodes (LEDs), achieving an electroluminescence efficiency of 25%. Furthermore, this approach enables manufacturable perovskite minimodules with a power conversion efficiency of approximately 23% and a record Voc, demonstrating excellent scalability and uniformity across large areas.
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