Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP27)
Publication date: 22nd October 2026
This study focuses on the relationship between a GeI2 additive and DMSO-based ink. Previously, we reported that incorporating a small amount of GeI2 into precursor inks for both Pb- and Sn-based perovskites significantly improved device efficiency and thermal stability(1-3). These enhancements were attributed to surface passivation by GeOx, which is formed via the oxidation of GeI2 by DMSO and diffuses to the interfaces during crystallization(4). Adding GeI2 to a DMSO-free ink reduced solar cell efficiency, indicating that a DMSO-based ink is essential for the GeI2 additive to function effectively. However, devices fabricated from DMSO-based inks exhibited lower long-term stability than those prepared from DMSO-free inks. To combine the advantages of DMSO-free processing and GeOx-derived passivation, we introduced a vacuum-deposited GeOx layer between the HTL and a GeI2-undoped Sn-based perovskite layer. The inserted GeOx layer effectively acts as a passivation layer(5). Perovskite/perovskite tandem solar cells passivated with GeOx are reported. Furthermore, Ge–Sn (1:1) alloyed perovskite solar cells were successfully prepared via spin-coating using a DMSO-free solvent(6). Our findings demonstrate that solvent selection is a critical factor in fabricating both GeOx-passivated and Sn–Ge alloyed perovskite solar cells.
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