Interfacial Charge Transfer and Built-In-Field-Assisted Carrier Separation in Two-Step Vapor-Deposited Cs2TiBr6/p-GaN Hybrid Heterojunctions for Zero-Bias UV-Vis Photodetection and Multispectral Imaging
Tarak Hidouri a, Samia Moulebhar a, Muskan Nabi b
a Mathematical, Physical and Computer Sciences Department, University of Parma, 43124, Italy
b CNR-SPIN LAquila, Italy
Poster, Tarak Hidouri, 067
Publication date: 22nd October 2026

Integrating halide perovskites with established semiconductor platforms, particularly nitride semiconductors, offers a promising route to hybrid photodetectors. Vacancy-ordered lead-free halide perovskites are attracting increasing interest as potentially more environmentally benign alternatives to lead-based materials and promising candidates for integration with nitrides. Here, we report the growth of compact Cs2TiBr6 thin films directly on p-GaN substrates by two-step reactive vapor deposition and evaluate the resulting heterojunction for self-powered photodetection and multispectral imaging. Structural, morphological, and compositional analyses confirm the formation of the vacancy-ordered Cs2TiBr6 phase, good substrate coverage, and an intimate interface with p-GaN. Optical and carrier-dynamics measurements reveal efficient interfacial charge transfer, suppressed radiative recombination, and enhanced charge separation after heterojunction formation. Density functional theory calculations further indicate localized interfacial charge redistribution and dipole formation, with an estimated transferred charge density of approximately 2.1 × 1012 electrons cm-2, supporting the presence of a built-in electrostatic driving force for photogenerated-carrier separation and extraction. Under zero applied bias and 254 nm illumination, the device delivers a photocurrent of approximately 1.4 × 10-4 A, a responsivity of approximately 0.42 A W-1, and a specific detectivity of 2.79 × 1011 Jones. It also exhibits a linear dynamic range of approximately 65 dB and rise and fall times of approximately 15 and 18 μs, respectively. Room-temperature raster-scanned measurements at 320, 450, and 532 nm successfully reconstruct optical patterns with wavelength-dependent photocurrent contrast. These results establish a viable route for integrating titanium-based vacancy-ordered halide perovskites with III-nitride platforms for self-powered ultraviolet–visible photodetection and imaging.

This work has been funded by the Italian Ministry of University and Research (MUR); the Italian National Recovery and Resilience Plan (PNRR), Mission 4, “Education and Research”—Component 2, “From Research to Business” Investment 1.2, “Funding projects presented by young researchers”, funded by NextGenerationEU, Notice No. 201 of 03/07/2024 of the Ministry of University and Research, call: YOURMSCA2024_0000041—Project “PERVONIDE”, "Design and properties of all-inorganic, lead-free perovskites on III-V-(N) materials" CUPD93C25000450007—UNITAANALITICA UA.PR.D.MAFI—Voce Coan CA.C.B.08.01.01.11—CODICE PROGETTO HIDO_T_24_MUR_YOUR2024_PNRR_01. (Recipient: Tarak Hidouri)

T.H. gratefully acknowledges Dr. Haichen Wang, Research Center Future Energy Materials and Systems of the University Alliance Ruhr and Interdisciplinary Centre for Advanced Materials Simulation (ICAMS), Group: Discovery and Characterization of Inorganic Stoichiometric Compounds, Ruhr University Bochum, Universitätsstraße 150, Bochum Germany, for his valuable assistance with the DFT calculations and their interpretation.

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