The choice of ETL and buffer layer on the performance of CsPbI3 quantum dot based light emitting diodes
Kunnummal Mangott Muhammed Salim a, Ehsan Hassanabadi a, Sofia Masi a, Azhar Fakharuddin b, Ivan Mora Sero a
a Universitat Jaume I, Institute of Advanced Materials (INAM) - Spain, Avinguda de Vicent Sos Baynat, Castelló de la Plana, Spain
b Imec, Kapeldreef 75, 3001, Leuven, Belgium
Poster, Kunnummal Mangott Muhammed Salim, 032
Publication date: 23rd April 2020

The perovskite quantum dots (PQD’s) are markedly employed in light emitting diodes (LED’s); owing to their low-cost fabrication, high spectral color purity, and high photoluminescence quantum yield (PLQY). Among this all-inorganic CsPbI3 PQD’s, are found to be exhibiting high PLQY (>95%) in solution and in thin films which would ultimately result in the higher internal quantum efficiencies in devices. Moreover, the efficiency of a good working LED has related to a couple of parameters such as charge injection efficiency and light extraction efficiency. The former one is related to charge transport, injection efficiency, shunt path, Joule heating, etc and the latter is related to the optical efficiency, which is purely depending on the device engineering.[1,2] Strategies to achieving efficient LEDs require, beside an emitter layer with high optical quality; negligible charge injection barrier between the transporting layers and an optimized thickness of transporting layers for a controlled flow of charge carriers through the device.

This research work was funded by European Research Council (ERC) via Consolidator Grant (724424—No-LIMIT), Generalitat Valenciana project IDIFEDER/2018/012 and Universitat Jaume I (project SOLENPEUJI-B2016-05).

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