Size and Shape as a Tool for Tuning the Bandgap Energy of InAs Single-Tetrapods
Jordi Llusar a, Ivan Infante a
a BCMaterials, Basque Center for Materials, Applications and Nanostructures, UPV/EHU Science Park, 48940 Leioa, Spain
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS23 & Sustainable Technology Forum València (STECH23) (MATSUS23)
#ChemNano23 - Chemistry of Nanomaterials
València, Spain, 2023 March 6th - 10th
Organizers: Loredana Protesescu and Maksym Yarema
Poster, Jordi Llusar, 335
Publication date: 22nd December 2022

The shape and size of colloidal semiconductor quantum dots (QDs) have been demonstrated to play a major role in the optoelectronic characteristics of these materials, for example by confining the exciton in various forms and tuning systematically the bandgap energy. [1]

On the one hand, there are spherical QDs (sQDs), which are the simplest and the most widely studied nanocrystals and, on the other hand, there are more complex structures, such as tetrapods (TPs), which may combine the spherical structure with the presence of elongated arms. [2] Specifically, TPs turned out to be an attractive nanostructure because they can benefit from the strengths of 0D and 1D nanostructures as well as avoid their limitations. Most TP studies conducted so far are based on II-VI semiconductors because of their accessible synthesis, [3] however, III-V InP TPs have also been recently prepared recently. [4]

Until now, the synthesis of InAs TPs has not been accomplished yet, however, understanding their electronic structure and features can be important, considering that the synthesis of InAs QDs is becoming more popular. In addition, InAs QDs present bandgap tunability in the near infrared (NIR), a range of energy particularly attractive to obtain near-infrared (NIR) Hg- and Pb-free detectors. [5]

In this work, we report how the length and thickness of the arms of a small InAs single-TP may affect the band gap energy in relation to an InAs sQD. Additionally, we will focus on the distribution of ground-state electron and hole charge densities in the nanostructure and how their overlap, which is linked to the optoelectronic efficiency, changes consequently.

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