Optical and electronic properties of getchellite
Agata Sabik a, Miłosz Grodzicki a, Robert Kudrawiec a, Wojciech M. Linhart a
a Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, Wrocław 50-370, Poland
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS23 & Sustainable Technology Forum València (STECH23) (MATSUS23)
#2DSUSY - 2D Nanomaterials for Sustainable Energy
València, Spain, 2023 March 6th - 10th
Organizers: Maria Antonia Herrero Chamorro and Maurizio Prato
Poster, Agata Sabik, 357
Publication date: 22nd December 2022

Getchellite is a layered semiconducting ternary alloy with chemical formula of AsSbS3. The material possesses a monoclinic structure, where the basic building blocks of crystal are trigonal AsS3 and SbS3 pyramids. The distributions of arsenic and antimony cations exhibit site disorder, however for natural crystal the higher degree of cations ordering was found in comparison to synthetic ones [1,2]. It is already well documented for conventional semiconducting alloys, like II-IV-V2 compounds, that changing the degree of site disorder allows to tune materials’ optical and electronic properties within the same crystal structure and stoichiometry [3]. The challenges fundamental investigations are necessary in order to characterize the disorder and determine its influence on material properties.

Herein, the optical and electronic properties of synthetic getchellite crystal are presented. Utilizing X-ray photoelectron spectroscopy, the AsSbS3 stoichiometry and binding states of its elements are determined. The position of valance band maximum relative to the Fermi level is of about 1 eV. Further, the optoelectronic properties of alloy within temperature range from 20 to 300 K are probed by absorption and photoreflectance spectroscopies. The energy of absorption edge is in accord with the photoreflectance transition value, which reveals that the direct optical transition is predominated.

Authors thank the National Science Centre for funding in the framework of Opus programme 2019/35/B/ST5/02819.

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