Contactless Electroreflectance Spectroscopy of MPH/GaN Interface
Ewelina Zdanowicz a, Łukasz Przypis a b, Wiktor Żuraw a b, Miłosz Grodzicki a, Mikołaj Chlipała c, Czesław Skierbiszewski c, Artur Herman a, Robert Kudrawiec a
a Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
b Saule Research Institute, Dunska 11, 54-427 Wroclaw, Poland
c Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Fall 2024 Conference (MATSUSFall24)
#AdCharMHP - Advanced Characterisation of Metal Halide Perovskites towards Improved Optoelectronics
Lausanne, Switzerland, 2024 November 12th - 15th
Organizers: Juliane Borchert, Robert Oliver and Alexandra Ramadan
Poster, Ewelina Zdanowicz, 406
Publication date: 28th August 2024

Perovskites are highly attractive for optoelectronic devices due to their exceptional optical and electronic properties. Their tunable bandgaps, high light absorption, and promising charge carrier mobility make them ideal candidates for applications such as solar cells, light-emitting diodes, and photodetectors. [1] Moreover, perovskites can be fabricated using low-cost, solution-based processes, which allows for scalable production. [2] Their versatility, combined with the potential for enhanced device performance, makes them a promising material for the future of optoelectronics.

After an impressive 30-year career in (opto)electronics—spanning LEDs, lasers, photodetectors, HEMTs, and power devices—GaN continues to be an attractive subject of study, particularly when combined with emerging materials like perovskites. [3]

In this work, we present a detailed study of the electronic phenomena occurring at the interface between GaN and selected representatives of 3D and 2D MHP. Using optical spectroscopy methods such as contactless electroreflectance, we examine the influence of perovskite on the surface Fermi level of GaN. This analysis, supported by UV-photoelectron spectroscopy and time-resolved photoluminescence, allows us to address interfacial band alignment and carrier transfer. Based on the resulting interfacial properties, we propose the application of specific MHP/GaN hybrids in various optoelectronic devices, such as photodetectors, photonic synapses, and optical memory systems.

This work was supported by the National Science Centre (NCN) in Poland through grant Preludium-21 no. 2022/45/N/ST3/03465. E.Z. was also supported by the Foundation for Polish Science (FNP).

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