Publication date: 21st July 2025
The study of carrier transport has advanced significantly in recent years with the emergence of a series of transient microscopy techniques that allow for imaging of carriers with few-nanometer and sub-nanosecond resolution1. The access to time-resolved information of carrier transport provides critical insight into the different transport regimes that carriers may experience during their lifetime. Traditional transient microscopy techniques have relied on photoluminescence2,3 or absorption4 to generate contrast; however, these techniques have major disadvantages due to their reliance on bright samples or high excitation powers, respectively.
Recently, transient scattering microscopy (TScM) has emerged as an alternative to these techniques6,7, it relies on interference and small changes in the refractive index to generate contrast, as such it is not dependent on photoluminescence and achieves high SNR even at low excitation powers. Importantly though, the sensitivity of TScM to different species of carriers can complicate the interpretation of results, highlighting the need to develop models specifically tailored to TScM.
In this work, we perform TScM on bulk TMDCs. We observe exciton transport characterized by a fast-moving free exciton population and a slow trapped population. We find that the resulting spatial distribution deviates from a gaussian distribution. To better interpret these features, we perform simulations incorporating both shallow traps and Auger recombination and quantify these deviations by analyzing how the kurtosis of the distributions evolves over time.
Our findings show that, except at high excitation fluences, exciton dynamics are well-described by the shallow trap model. This explains the observed non-Gaussian behavior and emphasizes the need for analysis methods beyond traditional Gaussian fitting.
In conclusion, we combine experiment and simulation to demonstrate how multispecies populations affect exciton transport in TScM and introduce modeling approaches that allow us to obtain detailed information about the excited states dynamics in these materials.
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