Publication date: 21st July 2025
Halide perovskites, widely recognized for their advantages in optoelectronics, are now being actively explored as resistive switching materials for nanoelectronics due to their mixed ionic–electronic conductivity, low power consumption, and facile ion migration [1]. While three-dimensional (3D) halide perovskites exhibit memristive behavior, their polycrystalline nature and poor environmental stability have hindered practical implementation [2]. Recent advances in crystallographic orientation control [3], phase engineering [4], and mobile ion species engineering [5] have addressed these critical limitations, enabling significant progress in memory and neuromorphic technologies. Furthermore, the long-standing challenges related to phase and environmental instability in 3D halide perovskites have been effectively overcome through the development of two-dimensional (2D) halide perovskite systems. Array-level demonstrations confirm stable device operation, underscoring the feasibility of large-area integration. These findings position halide perovskites as versatile and scalable materials for next-generation neuromorphic hardware, with strong potential for energy-efficient, high-performance artificial intelligence systems. They also open pathways toward the integration of sensing and computing, enabling future advances in sensor fusion and neuromorphic intelligence.
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