Exploring the Regime of Vanishing Quantum Confinement in Semiconductor Nanocrystals
Tjom Arens a, Sander Vonk a, Willem Vlasblom a, Margarita Samoli b, Zeger Hens b, Pieter Geiregat b, Freddy Rabouw a
a Soft Condensed Matter, Debye Institute for Nanomaterials Science, Utrecht University, Princeton Square1, 3584 CC Utrecht, the Netherland.
b Department of Chemistry, Physics and Chemistry of Nanostructures Group, Ghent University, Belgium
Proceedings of MATSUS Fall 2025 Conference (MATSUSFall25)
E4 (Ultrafast) Spectroscopy for Energy Materials - #SpEM
València, Spain, 2025 October 20th - 24th
Organizers: Jaco Geuchies and Freddy Rabouw
Oral, Tjom Arens, presentation 103
Publication date: 21st July 2025

Recently, nanocrystals (NCs) in the regime of vanishing quantum confinement—referred to as bulk nanocrystals (BNCs)—have demonstrated remarkable optical gain characteristics.[1,2] While bulk semiconductor models have successfully explained their high-power lasing behavior, the validity of these models in the low-density regime—where the number of charge carriers per nanocrystal volume becomes discrete—remains an open question. In this study, we investigate the dynamics and energetics of well-defined excited states containing 1 or 2 holes and up to 4 electrons using single-photon avalanche diode (SPAD) array technology. We observe emission from two discrete energy levels for each of the six isolated excited states, indicative of thermal excitation. To validate this thermal behavior, we investigate the temperature-dependent emission characteristics of dozens of individual quantum dots, simultaneously, using multi-particle spectroscopy. This analysis reveals a quantitative match with Boltzmann statistics. By combining the particle-in-a-box approach with Boltzmann population distributions, we develop a model that captures the dynamics and energetics of nanocrystals across the full range from strong quantum confinement to the bulk limit. This work thereby provides a framework for understanding the optical behavior of NCs in the transitional regime between quantum confined and bulk-like, which becomes increasingly relevant as these materials are gaining more prominence in optoelectronic applications.

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