Publication date: 21st July 2025
Toxicity, scarceness, and peak operating temperatures above 300 °C are some of the main challenges faced by most thermoelectric materials. In this study, we examine the thermoelectric behavior of various crystalline forms of tin-based perovskite thin films. A two-dimensional phase, Cs₂SnI₄, is produced via vacuum thermal evaporation and can be readily transformed into the black β phase of CsSnI₃ (B-β CsSnI₃) by annealing at 150 °C. B-β CsSnI₃ acts as a p-type semiconductor, exhibiting a figure of merit (ZT) between 0.021 and 0.033 at temperatures under 100 °C. These properties make it a strong contender for powering compact electronic systems, such as wearable sensors, within the framework of the Internet of Things. The B-β phase remains stable under nitrogen but quickly oxidizes into Cs₂SnI₆ when exposed to air. Cs₂SnI₆ displays a negative Seebeck coefficient and extremely low thermal conductivity. Nevertheless, its ZT values are roughly one order of mangitude lower than those of B-β CsSnI₃, primarily due to its significantly reduced electrical conductivity.
The research leading to these results has received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (Grant Agreement No. 834431). The authors acknowledge support from the Comunitat Valenciana (IDIFEDER/2018/061 and PROMETEU/2020/077) as well as by the Ministry of Science and Innovation (MCIN) and the Spanish State Research Agency (AEI) (Project PCI2019-111829-2 funded by MCIN/AEI/10.13039/501100011033) and by the European Union (Project CEX2019-000919-M) funded by MCIN/AEI/10.13039/501100011033 Dutch Research Council (NWO, FOM Focus Group “Next Generation Organic Photovoltaics”). P.S. thanks the Spanish Ministry of Universities for her predoctoral grant (FPU18/01732 and EST19/00295). F.P. acknowledges funding from the Ramón y Cajal program of the Spanish Ministry of Science (RYC2020-028803-I) as well as grant CNS2023-144331, funded by MCIU/AEI/10.13039/501100011033 and by European Union «Next Generation EU»/PRTR.
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