Comprehensive Study on Perovskite-Based Devices: From Solar Cell Degradation to High-Performance Memristors
Beatriz Romero Herrero Romero Herrero a
a Instituto de Investigación de Tecnologías para la Sostenibilidad, Universidad Rey Juan Carlos, C/Tulipán s/n, 28933 Móstoles, Spain
Proceedings of MATSUS Fall 2025 Conference (MATSUSFall25)
A7 Simulation and Characterization of OptoElectroIonic Devices: Performance, Degradation Mechanisms and Stability - #SimChar
València, Spain, 2025 October 20th - 24th
Organizers: Pilar López Varo and Sonia R. Raga
Invited Speaker, Beatriz Romero Herrero Romero Herrero, presentation 143
Publication date: 21st July 2025

The experimental research carried out by the DELFO group can be summarised in three main areas. The first area focuses on the study of the degradation mechanisms and performance optimization of perovskite-based optoelectronic devices under various conditions. First, we investigate the impact of ultraviolet (UV) light on perovskite solar cells with the structure ITO/PTAA/CsMAFAPbIBr/PCBM/BCP/Ag. Devices were exposed to continuous 385 nm UV light at intensities ranging from 1.5 to 30 mW/cm² in an inert N₂ atmosphere. Periodic J–V measurements reveal that UV exposure primarily affects the short-circuit current (JSC), while the open-circuit voltage (VOC) remains stable. The efficiency loss is attributed to reduced charge extraction, with a logarithmic trend observed in T80 versus UV power density. High-speed J–V scans suggest that JSC degradation is mainly driven by UV-induced ionic migration. Second, we compare inverted (p-i-n) perovskite solar cells using NiOX as the hole transport layer, with and without a self-assembled monolayer (Me-PACz). SAM-modified devices show improved VOC and efficiency due to reduced interfacial recombination, as confirmed by temperature-dependent electrical characterization. However, long-term outdoor testing reveals that SAM-based minimodules suffer from greater JSC degradation, likely due to SAM deterioration. These findings contribute to a deeper understanding of stability and performance in perovskite devices.Finally, we present the development of MAPbI₃-based memristors, focusing on the influence of buffer layers, perovskite thickness, and electrode materials. Optimized devices demonstrate excellent resistive switching behavior, with high retention (>2×10⁵ s), endurance (30,000 cycles), and ON/OFF ratios (~10⁶), making them promising candidates for non-volatile memory applications.

This research was funded by Agencia Estatal de investigación (projects PID2023-148746OB-I00 and TED2021-131807A-I00), and to the Universidad Rey Juan Carlos (2023/SOLCON-131819). This research was also partly funded by the fonds wetenschappelijk onderzoek (FWO) with grant number 1S01525N.

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