Interplay of ionic and optoelectronic effects in halide perovskite devices
Nripan Mathews a
a School of Materials Science and Engineering, Nanyang Technological University, Singapore
Proceedings of MATSUS Fall 2025 Conference (MATSUSFall25)
A4 Fundamental understanding of halide perovskite materials and devices - #PeroFun
València, Spain, 2025 October 20th - 24th
Organizers: Krishanu Dey, Iván Mora-Seró and Yana Vaynzof
Invited Speaker, Nripan Mathews, presentation 149
Publication date: 21st July 2025

Halide perovslkites are well known for their excellent optoelectronic properties that has enabled them to create record breaking performances in areas of solar harvesting, light emitting diodes and detectors. In this talk we will focuss on the ionic effects within this family of semiconductors which is normally as its weakness. The talk will cover our efforts to modulate and utilise the ionic properties of halide perovskites. 

The significant ionic activity in these materials enables their use in memory devices, where the interplay between ionic and electronic transport gives rise to resistive switching behavior. These distinctive characteristics make halide perovskites highly promising for neuromorphic applications. Their strong light absorption and coupled ionic–electronic transport allow them to be stimulated by both electrical and optical inputs. In this presentation, I will discuss various approaches to modulate the material compositions, interfaces to tailor memristive behavior in a wide variety of architectures including memristive PV devices as well as perovskite-based LEDs with integrated memory functions. These devices can emulate a wide variety of functions such as human visual processing, enabling functions such as contrast enhancement, feature extraction, and other forms of sensory pre-processing. Finally, I will also touch on how perovskite-based memory devices can be engineered to emulate artificial neurons, paving the way for highly integrated and multifunctional neuromorphic architectures.

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