Publication date: 21st July 2025
Nanostructured Semiconductors are a playing an increasingly dominant role for next-generation light-harvesting and light-emitting applications. In these materials, quantum confinement effects allow for enhanced control over their optoelectronic properties while reduced processing temperatures provide routes to more flexible integration. However, the reduced dimensionality and increased disorder can significantly impact the spatial dynamics of the energy carriers within the material.
To study these effects, we employ a series of time-resolved microscopy techniques which allow for a direct visualization of the excited state transport with few-nanometer and sub-nanosecond resolution. I will start the talk by giving an overview of some of the surprising effects that can be observed in the presence of energetic disorder using mixed-halide and doped 2D perovskites as an example. Halide mixing is one of the most powerful techniques to tune the optical bandgap of metal-halide perovskites across wide spectral ranges. However, halide mixing has commonly been observed to result in phase segregation, which reduces excited-state transport and limits device performance. Our results show that even in the absence of phase segregation, halide mixing still impacts carrier transport due to the local intrinsic inhomogeneities in the energy landscape. Using Mn-doping, we show how we can engineer local energy landscapes and derive detailed information about the trapping mechanisms of energy carriers.
In the last part of the talk, I will present our most recent efforts using interferometric scattering techniques. The exceedingly high signal-to-noise-ratio that interferometric scattering provides allows not only for the direct imaging of charge carriers, but also for super-resolution imaging of lattice dynamics.
This work was funded by the European Union (ERC, EnVision, project number 101125962).
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